PART |
Description |
Maker |
T431616B-20S T431616B T431616B-10C T431616B-10S T4 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
325-5M-15 305-5M-15 1595-5M-15 575-5M-15 480-8M-20 |
RIEMEN SYNCHRON HTD L 325MM B 15MM RIEMEN SYNCHRON HTD L 305MM B 15MM RIEMEN SYNCHRON HTD L 575MM B 15MM Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits RIEMEN SYNCHRON HTD L 480MM B 30MM RIEMEN SYNCHRON HTD L 560MM B 200MM RIEMEN SYNCHRON HTD L 600MM B 200MM Dual/Triple-Voltage µP Supervisory Circuits RIEMEN SYNCHRON HTD L 640MM B 200MM Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits Low-Noise, Low-Dropout, 150mA Linear Regulators with '2982 Pinout RIEMEN SYNCHRON HTD L 720MM B 30MM 3-1/2 Digit A/D, BCD, -40C to 85C, 24-PDIP 600mil, TUBE RIEMEN SYNCHRON HTD L 880MM B 200MM RIEMEN SYNCHRON HTD L 960MM B 200MM RIEMEN SYNCHRON HTD L 960MM B 30MM RIEMEN SYNCHRON HTD L 1040MM B 200MM RIEMEN SYNCHRON HTD L 450MM B 15MM 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 2-Wire-Interfaced 8-Bit I/O Port Expander with Reset Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits 1.2A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE RIEMEN SYNCHRON HTD L 1100MM B 15MM RIEMEN SYNCHRON HTD L 980MM B 15MM RIEMEN SYNCHRON HTD L 1800MM B 15MM RIEMEN SYNCHRON HTD L 1120MM B 30MM RIEMEN SYNCHRON HTD L 1120MM B 200MM RIEMEN SYNCHRON HTD L 1200MM B 200MM RIEMEN SYNCHRON HTD L 1260MM B 200MM RIEMEN SYNCHRON HTD L 1600MM B 200MM RIEMEN SYNCHRON HTD L 1440MM B 200MM RIEMEN SYNCHRON HTD L 1440MM B 30MM RIEMEN SYNCHRON HTD L 1040MM B 30MM RIEMEN SYNCHRON HTD L 1420MM B 15MM RIEMEN SYNCHRON HTD L 1600MM B 30MM RIEMEN SYNCHRON HTD L 1270MM B 15MM RIEMEN SYNCHRON HTD L 1200MM B 30MM RIEMEN SYNCHRON HTD L 890MM B 15MM 里门的SYNCHRON HTD890MM15毫米 RIEMEN SYNCHRON HTD L 1595MM B 15MM 里门的SYNCHRON HTD595MM5毫米 RIEMEN SYNCHRON HTD L 560MM B 30MM 里门的SYNCHRON HTD560MM0毫米 RIEMEN SYNCHRON HTD L 880MM B 30MM 里门的SYNCHRON HTD80┨乙30毫米
|
TE Connectivity, Ltd. Amphenol, Corp. Rubycon, Corp.
|
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
M52S32162A M52S32162A-10BG M52S32162A-10TG M52S321 |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
M52D32162A-7BG M52D32162A-7TG M52D32162A09 M52D321 |
1M x 16Bit x 2Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
M12L32321A-7BG M12L32321A-5.5BG M12L32321A-6BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
RMS132UAW-10E RMS132UAW-6E RMS132UAW-75E RMS132UAW |
512K x 32Bits x 2Banks Low Power Synchronous DRAM
|
Emerging Memory & Logic Solutions Inc
|
N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48 8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 K |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
|
ETC[ETC] Samsung semiconductor
|
K4S161622E-TC/I/E |
512K x 16Bit x 2 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
IS45SM32100D-6BLA1 IS42SM32100D-75BLI IS42VM32100D |
512K x 32Bits x 2Banks Low Power Synchronous DRAM
|
Integrated Silicon Solu...
|